A 1.2V 10µW NPN-based temperature sensor in 65nm CMOS with an inaccuracy of ±0.2°C (3s) from -70°C to 125°C

An NPN-based temperature sensor with digital output transistors has been realized in a 65-nm CMOS process. It achieves a batch-calibrated inaccuracy of ±0.5 C (3σ) and a trimmed inaccuracy of ±0.2 C (3σ) over the temperature range from −70 C to 125 C. This performance is obtained by the use of NPN transistors as sensing elements, the use of dynamic techniques, i.e. correlated double sampling and dynamic element matching, and a single room-temperature trim. The sensor draws 8.3 μA from a 1.2-V supply and occupies an area of 0.1 mm.